Infineon IPZ40N04S5-3R1: A Benchmark in Power MOSFET Efficiency and Compact Design
In the realm of power electronics, the quest for higher efficiency, greater power density, and improved thermal performance is relentless. Addressing these demands, the Infineon IPZ40N04S5-3R1 40V Single N-Channel HEXFET Power MOSFET stands out as a premier solution, expertly engineered within the space-saving SuperSO8 package. This device encapsulates the cutting-edge advancements that make modern power conversion systems more effective and compact.
A key highlight of this MOSFET is its exceptionally low on-state resistance (R DS(on)), which is rated at a mere 3.1 mΩ maximum at 10 V. This ultra-low resistance is paramount for minimizing conduction losses, directly translating into higher system efficiency, reduced heat generation, and the potential for cooler operation. Whether deployed in synchronous rectification stages of switch-mode power supplies (SMPS), motor control circuits, or battery management systems, this characteristic ensures that more power is delivered to the load and less is wasted as heat.
The choice of the SuperSO8 package is a strategic advantage. While it offers a footprint 30% smaller than a standard SO-8, it does not compromise on performance. In fact, it enhances it. The package is designed for superior thermal dissipation, featuring an exposed copper leadframe that provides a very low thermal resistance path from the silicon die to the printed circuit board (PCB). This allows the heat generated during switching to be efficiently transferred to the board, enabling the device to handle a continuous drain current (I D) of up to 40 A without requiring a disproportionately large heatsink. This makes it an ideal candidate for space-constrained applications where board real estate is at a premium.
Furthermore, the MOSFET boasts outstanding switching characteristics. The low gate charge (Q G) and low reverse recovery charge (Q rr) ensure fast switching speeds, which are crucial for high-frequency operation. This leads to a reduction in switching losses, further boosting the overall efficiency of the application, especially in demanding scenarios like high-frequency DC-DC converters.
Robustness is another cornerstone of its design. With a drain-to-source voltage (V DS) of 40 V, it offers a sufficient safety margin for common 24 V systems, protecting against voltage spikes. It is also 100% avalanche tested, guaranteeing reliability under extreme operating conditions and enhancing the longevity of the end product.
ICGOOODFIND: The Infineon IPZ40N04S5-3R1 is a superior component that masterfully balances minimal power loss, exceptional thermal management in a miniature form factor, and high reliability. It is a definitive choice for designers aiming to push the boundaries of power density and efficiency in their next-generation applications.
Keywords: Low R DS(on), SuperSO8 Package, High Efficiency, Power Density, Thermal Performance.
