Infineon IPD90P03P4L04ATMA1: A High-Performance P-Channel Power MOSFET for Advanced Automotive and Industrial Applications

The relentless drive towards higher efficiency, greater power density, and enhanced reliability in automotive and industrial systems demands semiconductor components that excel under stringent conditions. Addressing this need, the Infineon IPD90P03P4L04ATMA1 stands out as a premier P-Channel Power MOSFET engineered to deliver superior performance. This device is a critical component in power management and switching applications, where its advanced characteristics ensure optimal operation even in the most demanding environments.

As a P-Channel MOSFET, this component offers a significant advantage in circuit design by simplifying gate driving requirements, especially in high-side switch configurations. The IPD90P03P4L04ATMA1 is built on Infineon's proprietary OptiMOS™ technology, a hallmark of quality and performance in power semiconductors. This technology empowers the MOSFET with an exceptionally low on-state resistance (RDS(on)) of just 4.2 mΩ at a gate-source voltage of -10 V. This ultra-low resistance is pivotal for minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for more compact designs by requiring less cooling.

The device is characterized by a robust -30 V drain-source voltage (VDS) rating, making it highly suitable for a wide range of 12 V and 24 V DC systems prevalent in automotive electronics, such as electric power steering (EPS), braking systems, and body control modules. In industrial settings, it is ideal for motor control, load switching, and power supplies. Furthermore, its avalanche ruggedness and high intrinsic reliability ensure uninterrupted operation despite voltage spikes and harsh transients common in these applications.

A key attribute of the IPD90P03P4L04ATMA1 is its AEC-Q101 qualification, which certifies its compliance with the rigorous standards for automotive-grade components. This qualification guarantees its performance and longevity across the extreme temperature fluctuations, humidity, and vibrational stresses encountered in vehicles. Packaged in the space-efficient DPAK (TO-252), it provides an excellent balance between power handling capability and board space savings.

ICGOOODFIND: The Infineon IPD90P03P4L04ATMA1 is a top-tier P-Channel MOSFET that sets a high benchmark for efficiency, power density, and reliability. Its ultra-low RDS(on), high avalanche ruggedness, and automotive-grade qualification make it an indispensable solution for designers aiming to push the boundaries of performance in next-generation automotive and industrial power systems.

Keywords:

Power Management

AEC-Q101 Qualified

Low RDS(on)

P-Channel MOSFET

Automotive Grade