High-Efficiency Power Conversion with Infineon's 650V CoolMOS™ IPP65R125C7

In the rapidly evolving world of power electronics, achieving high efficiency and reliability in power conversion systems is more critical than ever. Infineon’s 650V CoolMOS™ IPP65R125C7 sets a new benchmark in superjunction MOSFET technology, offering engineers a powerful solution to meet the demanding requirements of modern SMPS, telecom, industrial, and renewable energy applications.

One of the standout features of the IPP65R125C7 is its exceptionally low on-state resistance (RDS(on)) of just 125 mΩ, combined with reduced gate charge (Qg) and output capacitance (Coss). This allows for significantly lower conduction and switching losses, leading to higher overall system efficiency. The MOSFET is built on Infineon’s advanced CoolMOS™ C7 technology, which optimizes the trade-off between RDS(on) and switching performance. This makes it particularly suitable for high-frequency switching operations where minimizing energy loss is paramount.

Moreover, the device offers enhanced thermal performance and robustness, supporting operation at high temperatures while maintaining stability. Its low figure-of-merit (FOM) ensures that power supplies can achieve higher power density without compromising on thermal management. This is essential for applications like server power supplies, electric vehicle charging stations, and solar inverters, where both efficiency and compact design are crucial.

The IPP65R125C7 also incorporates strong body-diode characteristics, improving reliability in hard-switching and resonant topologies. Its superior dv/dt capability and high noise immunity further contribute to system durability, reducing the need for additional protective components and simplifying circuit design.

With a focus on sustainability and energy savings, this MOSFET enables designers to create systems that not only meet but exceed international energy efficiency standards such as 80 PLUS. Whether used in PFC stages, LLC resonant converters, or synchronous rectification blocks, the IPP65R125C7 stands out as a versatile and high-performance component.

ICGOOODFIND

Infineon’s 650V CoolMOS™ IPP65R125C7 exemplifies innovation in power semiconductor technology, delivering high efficiency, thermal robustness, and design flexibility for next-generation power conversion systems.

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Keywords:

Power Efficiency, Superjunction MOSFET, Switching Performance, Thermal Management, High Frequency Operation