Infineon SPP08N80C3XKSA1 800V CoolMOS™ Power Transistor: Datasheet, Specifications, and Application Notes

The relentless pursuit of higher efficiency, power density, and reliability in power electronics has driven the evolution of MOSFET technology. At the forefront of this innovation is Infineon Technologies with its CoolMOS™ family. The SPP08N80C3XKSA1 stands as a prime example, an 800V superjunction MOSFET engineered to set new benchmarks in performance for a wide range of switching applications.

This article delves into the key specifications, datasheet insights, and practical application notes for this powerful component.

Key Specifications and Datasheet Highlights

The SPP08N80C3XKSA1 is built on Infineon's advanced CoolMOS™ C3 superjunction technology. This platform is renowned for achieving an exceptionally low figure of merit (R DS(on) x Q g), which directly translates to reduced switching losses and higher overall efficiency.

The core electrical specifications include:

Drain-Source Voltage (V DS): 800 V. This high voltage rating makes it suitable for mains-powered applications, including those with demanding surge and overload conditions.

Continuous Drain Current (I D): 7.7 A (at T C = 25°C). This current rating ensures robust performance in moderate to high-power circuits.

On-Resistance (R DS(on)): 0.380 Ω (max. @ V GS = 10 V, I D = 4 A). The low on-resistance is critical for minimizing conduction losses, leading to cooler operation and higher efficiency.

Gate Threshold Voltage (V GS(th)): 3.5 V (typ.). This standard threshold ensures good noise immunity and compatibility with a wide array of gate driver ICs.

Total Gate Charge (Q g): 36 nC (typ. @ V GS = 10 V). A low gate charge is essential for achieving fast switching speeds and reducing drive power requirements.

The device is offered in the TO-220 full-pack (FP) package. This industry-standard package provides excellent thermal performance and mechanical robustness, facilitating easy mounting to heatsinks for effective heat dissipation.

Application Notes and Circuit Design Considerations

The primary strength of the CoolMOS™ C3 series lies in its versatility across various high-efficiency SMPS (Switch-Mode Power Supply) and power conversion topologies.

Typical Applications:

Switched-Mode Power Supplies (SMPS): Particularly in Power Factor Correction (PFC) stages (both boost and interleaved configurations) and LLC resonant converters for servers, telecom, and industrial systems.

Lighting: High-performance electronic ballasts and LED driver circuits requiring high efficiency and reliability.

Industrial Power: Motor controls, welding equipment, and solar inverters.

Critical Design Considerations:

1. Gate Driving: To fully exploit the fast switching capability of the SPP08N80C3XKSA1, a dedicated, low-impedance gate driver circuit is mandatory. Proper selection of gate drive voltage (typically 10-12V) and a gate resistor (to control rise/fall times and dampen ringing) is crucial for stable operation and managing EMI.

2. PCB Layout: A good PCB layout is non-negotiable for high-frequency switching designs. Keep all high-current loops (especially the power and switch loops) as small as possible to minimize parasitic inductance. This reduces voltage overshoot and electromagnetic interference (EMI).

3. Thermal Management: Despite its high efficiency, power dissipation generates heat. The TO-220FP package must be properly mounted on an adequately sized heatsink to keep the junction temperature (T J) within the specified safe operating area (SOA), ensuring long-term reliability.

4. Protection: Implementing protection features like overcurrent detection (e.g., using a shunt resistor or desaturation detection in advanced drivers) and overvoltage clamping (e.g., using RCD snubbers or TVS diodes) is essential to safeguard the MOSFET from abnormal operating conditions.

Conclusion and ICGOODFIND Summary

ICGOODFIND: The Infineon SPP08N80C3XKSA1 is a high-performance 800V MOSFET that exemplifies the benefits of CoolMOS™ C3 technology. Its standout features of low on-resistance and low gate charge make it an exceptional choice for designers aiming to maximize efficiency and power density in demanding applications like server PSUs, industrial drives, and advanced lighting systems. Careful attention to gate driving, layout, and thermal management is key to unlocking its full potential.

Keywords: CoolMOS™, Superjunction MOSFET, High-Efficiency, Power Supply, Application Notes.