Infineon IPD60R2K1CE: A High-Performance 600V CoolMOS™ CE Power Transistor
In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IPD60R2K1CE stands out as a premier solution, engineered to meet the rigorous demands of modern high-efficiency switched-mode power supplies (SMPS), power factor correction (PFC) stages, and various switching applications. As part of Infineon’s renowned CoolMOS™ CE series, this 600V power MOSFET combines exceptional switching performance with superior ease of use, making it a top choice for designers seeking to optimize their systems.
A key highlight of the IPD60R2K1CE is its ultra-low on-state resistance (RDS(on)) of just 2.1 Ω maximum at 25°C. This low resistance directly translates to reduced conduction losses, enabling higher efficiency and lower heat generation during operation. Even under high-load conditions, the device maintains excellent performance, contributing to overall system reliability and longevity.
The transistor leverages Infineon’s advanced superjunction (SJ) technology, which allows for minimal switching losses and robust switching behavior. This technology ensures that the IPD60R2K1CE operates efficiently at high frequencies, which is critical for reducing the size and cost of magnetic components and capacitors in power supply designs. The result is a more compact, lighter, and cost-effective final product without compromising performance.
Another significant advantage is its integrated fast body diode, which enhances reverse recovery characteristics. This feature is particularly beneficial in hard-switching topologies like flyback or PFC circuits, where it helps minimize electromagnetic interference (EMI) and reduces voltage spikes, thereby increasing system robustness and simplifying the design of snubber circuits.
Thermal management is further optimized thanks to the low thermal resistance of the package, ensuring that heat is effectively dissipated. This allows for higher power density designs and reduces the need for oversized heat sinks, saving both space and cost.
The IPD60R2K1CE is also designed with ease of use in mind. It features high dv/dt capability and improved gate robustness, providing greater immunity against gate voltage spikes and misoperation. These characteristics make the device more forgiving in demanding environments and help improve system reliability.
Target applications include server and telecom power supplies, industrial SMPS, lighting systems, and renewable energy inverters, where efficiency and power density are critical.
The Infineon IPD60R2K1CE exemplifies high performance through its ultra-low RDS(on), advanced CoolMOS™ CE technology, and integrated fast body diode. It offers designers an optimal balance of efficiency, thermal performance, and reliability, making it an ideal choice for next-generation power systems.
Keywords:
CoolMOS™ CE, Ultra-low RDS(on), Superjunction Technology, Integrated Fast Body Diode, High Efficiency
