Infineon IPG20N10S4L-35A: High-Performance 100V OptiMOS Power MOSFET

The relentless pursuit of higher efficiency, greater power density, and improved reliability in power electronics drives continuous innovation in semiconductor technology. At the forefront of this innovation is Infineon Technologies with its OptiMOS™ power MOSFET family. The IPG20N10S4L-35A stands as a prime example, a 100V N-channel MOSFET engineered to deliver exceptional switching performance and ultra-low on-state resistance.

This device is specifically designed for demanding applications, including high-frequency DC-DC conversion in server and telecom power supplies, motor control systems, and Class-D audio amplifiers. Its core strength lies in its remarkably low R DS(on) of just 3.5 mΩ (max. at V GS = 10 V). This ultra-low resistance is the key to minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for smaller heatsinks or even passive cooling solutions.

Beyond its static performance, the IPG20N10S4L-35A excels in dynamic operation. The OptiMOS technology platform ensures outstanding switching characteristics, with low gate charge (Q G ) and low figure-of-merit (FOM). This allows for faster switching speeds, which is crucial for increasing the operating frequency of switch-mode power supplies (SMPS). Higher frequencies, in turn, enable the use of smaller passive components like inductors and capacitors, significantly boosting the overall power density of the end product.

Housed in a robust TO-220 FullPAK package, this MOSFET offers a familiar and industry-standard footprint for easy design-in. The FullPAK variant features a fully molded plastic package, providing full isolation between the cooler and the device. This enhances safety by simplifying the mechanical assembly process, as it eliminates the need for an additional insulating washer, thereby improving thermal performance and reliability.

Furthermore, the device is qualified for industrial applications and boasts a high avalanche ruggedness, ensuring robust operation even under harsh conditions and unexpected voltage spikes. Its logic-level compatible gate drive (with a recommended V GS of 10V) further simplifies the driver stage design.

ICGOOODFIND: The Infineon IPG20N10S4L-35A is a high-performance power MOSFET that masterfully balances ultra-low conduction losses with fast switching speeds. It is an optimal choice for designers aiming to maximize efficiency and power density in a wide range of 100V applications, from advanced computing to industrial automation, all within a reliable and easy-to-use package.

Keywords: OptiMOS, Low RDS(on), High-Frequency Switching, Power Density, TO-220 FullPAK